MCR100-8A 0.8a scrs sensitive gate / silicon controlled rectifiers main features symbol value unit i b t(rms) 0.8a a v b drm b /v b rrm 950 v i b gt(q1) 200 ua description these devices are intened to be interfaced directly to microcontrollers, logic integr ated circuits and other low power gate trigger circuits. weight : 0.22 gram absolute maximum ratings symbol parameter value unit i b t(rms) b rms on-state current ( 180 conduction angle ) 0.8 a f = 50hz t = 10ms 8 i b tsm b non repetitive surge on-state current ( 1/2 cycle,sine wave , tj initial=25 ) f = 60hz t = 8.3ms 9 a i p 2 p t i p 2 p t value for fusing t p = 10ms 0.24 a p 2 p s dl/dt critical rate of rise of on-state current i b g b = 10ma di g = 0.1a/us 30 a/us i b gm b peak gate current 1 a p b g(av) b average gate power dissipation 0.1 w t b stg t b j b storage junction temperature range operating junction temperature range -40 to +150 -40 to +110 apr.2009 rev.2 1/4 a k g k g a to92
electrical characteristics (t j = 25 , unless otherwise specified) symbol test conditions MCR100-8A unit v drm ,v rrm 950 v i b gt b (1) max. 200 ua v b gt b v b d b = 7v rl=100 max. 0.8 v i h b (2) v b d b = 7v , i gt = 0.5 ma r gk =1k max. 5 ma i l v b d b = 7v , i gt = 0.5 ma r gk =1k max. 6 ma dv/dt (2) v b d b = 67 % v b drm b r gk =1k tj = 110 min. 50 v/us static characteristics symbol test conditions value unit v b t b (2) i tm = 1.2a tp = 380 us tj = 25 max. 1.55 v tj = 25 10 ua i b drm b i b rrm b v b drm b =v b rrm b tj = 110 max. 0.2 ma thermal resistance symbol parameter value unit r b th (j-l) b junction to lead for dc 80 /w r b th (j-a) b junction to ambient 150 /w 2/4
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